15 September 2005 Gaussian diffraction model for Sb thin films in super-resolution near-field structure
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Proceedings Volume 5966, Seventh International Symposium on Optical Storage (ISOS 2005); 59661A (2005) https://doi.org/10.1117/12.649659
Event: Seventh International Symposium on Optical Storage (ISOS 2005), 2005, Zhanjiang, China
Abstract
According to the change of refractive index of Sb thin film with temperature and the radial distribution of temperature within the spot, we can consider the spot irradiated by a Gaussian beam as a phase-modulated screen. Based on Fresnel-kirchhoff diffraction theory, a Gaussian diffraction model which can compute the intensity from far field has been set up. Using this model we can study the nonlinear change of mask layer samples induced by different reasons. A numerical calculation of the transmittance through an Sb-type super-resolution near-field structure was carried out as an example. The Gaussian diffraction model, which is similar to the far field detection process in the optical disk system, is very useful for analyzing the photothermal-induced local structure change of thin films in phase-change and super-resolution optical disks.
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Qingling Qu, Qingling Qu, Yang Wang, Yang Wang, Liyong Ren, Liyong Ren, Jingsong Wei, Jingsong Wei, Fuxi Gan, Fuxi Gan, } "Gaussian diffraction model for Sb thin films in super-resolution near-field structure", Proc. SPIE 5966, Seventh International Symposium on Optical Storage (ISOS 2005), 59661A (15 September 2005); doi: 10.1117/12.649659; https://doi.org/10.1117/12.649659
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