15 September 2005 A novel CuTCNQ derivative for rewritable optical storage
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Proceedings Volume 5966, Seventh International Symposium on Optical Storage (ISOS 2005); 59661G (2005) https://doi.org/10.1117/12.649667
Event: Seventh International Symposium on Optical Storage (ISOS 2005), 2005, Zhanjiang, China
Abstract
Thin film of a novel charge-transfer complex CuTCNQ derivative was prepared by spin-coating. Experimental results of this film for red-light rewritable optical storage are as follows: writing power13mW, writing pulse duration 200ns; erasing power 3mW, erasing pulse duration1000ns; reflectivity contrast C is greater than or equal to 27%; numbers of write-erase cycle N is greater than or equal to 1000.
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Wuqiao Huang, Yiqun Wu, Donghong Gu, Fuxi Gan, "A novel CuTCNQ derivative for rewritable optical storage", Proc. SPIE 5966, Seventh International Symposium on Optical Storage (ISOS 2005), 59661G (15 September 2005); doi: 10.1117/12.649667; https://doi.org/10.1117/12.649667
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