15 September 2005 A novel CuTCNQ derivative for rewritable optical storage
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Proceedings Volume 5966, Seventh International Symposium on Optical Storage (ISOS 2005); 59661G (2005) https://doi.org/10.1117/12.649667
Event: Seventh International Symposium on Optical Storage (ISOS 2005), 2005, Zhanjiang, China
Abstract
Thin film of a novel charge-transfer complex CuTCNQ derivative was prepared by spin-coating. Experimental results of this film for red-light rewritable optical storage are as follows: writing power13mW, writing pulse duration 200ns; erasing power 3mW, erasing pulse duration1000ns; reflectivity contrast C is greater than or equal to 27%; numbers of write-erase cycle N is greater than or equal to 1000.
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Wuqiao Huang, Wuqiao Huang, Yiqun Wu, Yiqun Wu, Donghong Gu, Donghong Gu, Fuxi Gan, Fuxi Gan, } "A novel CuTCNQ derivative for rewritable optical storage", Proc. SPIE 5966, Seventh International Symposium on Optical Storage (ISOS 2005), 59661G (15 September 2005); doi: 10.1117/12.649667; https://doi.org/10.1117/12.649667
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