11 September 2006 The influence of 630nm semiconductor laser irradiation on rat S180 ascitic tumor cells without photosensitizers
Author Affiliations +
Proceedings Volume 5967, 2004 Shanghai International Conference on Laser Medicine and Surgery; 59670S (2006) https://doi.org/10.1117/12.639207
Event: 2004 Shanghai international Conference on Laser Medicine and Surgery, 2004, Shanghai, China
Abstract
Objective: To study the influence of 630nm semiconductor laser irradiation on rat ascetic tumor cells without photosensitizers. Methods: In this work, rat ascitic tumor cells (S180) were incubation with no photosensitizers. 630nm light (total output 2W) was delivered to tumor cells at different fluence rate: 100, 200, 250mw/cm2 . According to each fluence rate, S180 tumor cells were divided into 5 groups, which were irradiated with various time periods: 20, 15, 10, 5, 3min. In all cases, S180 tumor cells were taken photos. We use the morphology and flow cytometry technique to investigate the apoptosis of tumor cells during the experiment. Results: 1. No obvious morphological difference between test groups and control groups at various time periods during the experiment. 2. No obvious cell apoptosis difference between test groups and control groups using FCM. Conclusion: After irradiated with 630nm semiconductor laser light, rat ascitic tumor cells (S180) with no photosensitizers incubation were not obviously killed or induced apoptosis.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Min Yan, Min Yan, Jing Zhu, Jing Zhu, Hui-Guo Zhang, Hui-Guo Zhang, Enling Li, Enling Li, Hongyu Luo, Hongyu Luo, } "The influence of 630nm semiconductor laser irradiation on rat S180 ascitic tumor cells without photosensitizers", Proc. SPIE 5967, 2004 Shanghai International Conference on Laser Medicine and Surgery, 59670S (11 September 2006); doi: 10.1117/12.639207; https://doi.org/10.1117/12.639207
PROCEEDINGS
4 PAGES


SHARE
Back to Top