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13 October 2005 Epitaxial CBN growth for fast electro-optic tunable devices
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In this study, we report for the first time the epitaxial growth of CBN thin films on Magnesium Oxide (MgO) substrates for optical device applications. A high deposition temperature (greater than or equal to to 800 oC) is required to obtain the epitaxial growth of CBN films. A parametric study is proposed in order to elaborate CBN thin films with a crystal structure as close as possible to that of a CBN bulk single crystal and with good optical characteristics. In particular, a low oxygen pressure (1 mTorr) allows synthesizing high-quality CBN thin films with an out-off plane lattice parameter comparable to the one of CBN bulk material at low surface roughness. The optical characterization of the high-quality CBN thin films reveals a high optical transmission (greater than or equal to 85 %) and a refractive index equal to 2.22 at 1.55 μm for certain deposition conditions. These optical properties clearly indicate the potential of CBN thin films for waveguide applications. This work presents a significant first step toward the integration and the potential use of CBN films for optical device applications.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul F. Ndione, Mounir Gaidi, Cristophe Durand, Roberto Morandotti, and Mohamed Chaker "Epitaxial CBN growth for fast electro-optic tunable devices", Proc. SPIE 5970, Photonic Applications in Devices and Communication Systems, 597011 (13 October 2005);

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