Transient photocurrent in alpha-As2Se3 thin films with optical bias

M. A. Iovu; D. V. Harea; I. A. Vasiliev; E. P. Colomeico; M. S. Iovu

doi:10.1117/12.639445

14 December 2005 Transient photocurrent in α-As₂Se₃ thin films with optical bias

M. A. Iovu, D. V. Harea, I. A. Vasiliev, E. P. Colomeico, M. S. Iovu

Proceedings Volume 5972, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies II; 59720A (2005) https://doi.org/10.1117/12.639445
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies II, 2004, Bucharest, Romania

Abstract

Relaxation of pulsed photocurrents under optical bias is studied in amorphous films of glassy alloys As₂Se₃:Sn_x (x=0 to 3.5 at. %) by the time-of-flight technique and steepness band-to-band light illumination. In frame of multiple-trapping model it is shown that by adding tin to the glass former As₂Se₃, the hole drift mobility is strongly increased and hamper the recombination. The kinetics of the long-term photocurrent decay can be described by stretched exponential hction. The dispersion parameter a, which can be deduced from the time dependence of the photocurrent I_ph(t) -infinity- exp[-(τ/τ)^α] and, is about 0.47 for undoped samples, and 0.35 for tin-containing samples. The obtained results indicate the variation in occupation of deep localized centers. For the investigated samples, the width of distribution of the deep traps is approximately kT/α~50-70 meV.

Citation Download Citation

M. A. Iovu, D. V. Harea, I. A. Vasiliev, E. P. Colomeico, and M. S. Iovu "Transient photocurrent in α-As₂Se₃ thin films with optical bias", Proc. SPIE 5972, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies II, 59720A (14 December 2005); https://doi.org/10.1117/12.639445

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