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14 December 2005 Transient photocurrent in α-As2Se3 thin films with optical bias
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Proceedings Volume 5972, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies II; 59720A (2005) https://doi.org/10.1117/12.639445
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies II, 2004, Bucharest, Romania
Abstract
Relaxation of pulsed photocurrents under optical bias is studied in amorphous films of glassy alloys As2Se3:Snx (x=0 to 3.5 at. %) by the time-of-flight technique and steepness band-to-band light illumination. In frame of multiple-trapping model it is shown that by adding tin to the glass former As2Se3, the hole drift mobility is strongly increased and hamper the recombination. The kinetics of the long-term photocurrent decay can be described by stretched exponential hction. The dispersion parameter a, which can be deduced from the time dependence of the photocurrent Iph(t) -infinity- exp[-(τ/τ)α] and, is about 0.47 for undoped samples, and 0.35 for tin-containing samples. The obtained results indicate the variation in occupation of deep localized centers. For the investigated samples, the width of distribution of the deep traps is approximately kT/α~50-70 meV.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. A. Iovu, D. V. Harea, I. A. Vasiliev, E. P. Colomeico, and M. S. Iovu "Transient photocurrent in α-As2Se3 thin films with optical bias", Proc. SPIE 5972, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies II, 59720A (14 December 2005); https://doi.org/10.1117/12.639445
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