14 December 2005 The model of EDFA parameters in the high-power limit
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Proceedings Volume 5972, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies II; 597211 (2005) https://doi.org/10.1117/12.639758
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies II, 2004, Bucharest, Romania
Abstract
In this paper we present one model for parameters used in EDFA (Erbium Doped Fiber Amplifier) in the case of high- power limit. We use for this model the absorption and emission cross-sections as a function of wavelength. In this model we use the fraction of Er3+ ions in the excited state as a function of wavelength for high-power limit. In addition, we present and compare these characteristics for different erbium-doped glasses in the case of EDFA. The results obtained here can be used to evaluate and to determine the characteristics for noise figure and for gain in the case of EDFA.
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Florentin Vasile, Florentin Vasile, Paul Schiopu, Paul Schiopu, } "The model of EDFA parameters in the high-power limit", Proc. SPIE 5972, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies II, 597211 (14 December 2005); doi: 10.1117/12.639758; https://doi.org/10.1117/12.639758
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