26 October 2005 1550 nm surface normal electroabsorption modulators for free space optical communications
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We report on the design, fabrication and characterization of 1550 nm electroabsorption modulators based on InGaAs/InAlAs coupled quantum wells grown on InP substrate by MBE. Large and small single modulators and modulator arrays have been fabricated on a wafer scale with an optimized device fabrication technology. The modulator size, shape, contact arrangements, and the array configurations have been varied to achieve suitable device performance for different retro-reflective free-space optical communication links. The device electrical and optical properties have been characterized by I-V, photoluminescence, absorption, transmittance and reflectance measurements. Modulators exhibit contrast ratios of 2:1 at a 3V driving bias and contrast ratios of 2:1 over a 30 nm bandwidth at 6V. A maximum contrast ratio of 4:1 is obtained at a 12 V driving voltage.
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Qin Wang, Qin Wang, Stéphane Junique, Stéphane Junique, Susanne Almqvist, Susanne Almqvist, Daniel Ågren, Daniel Ågren, Bertrand Noharet, Bertrand Noharet, Jan Y. Andersson, Jan Y. Andersson, "1550 nm surface normal electroabsorption modulators for free space optical communications", Proc. SPIE 5986, Unmanned/Unattended Sensors and Sensor Networks II, 598610 (26 October 2005); doi: 10.1117/12.630395; https://doi.org/10.1117/12.630395

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