4 November 2005 720 mW continuous wave room-temperature operation diode laser emitting at around 2.4 μm
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Abstract
Specific developments on technological steps involved in the fabrication of antimony based diode lasers have been carried out. Evident improvements of the performances have been achieved. High power, low threshold, room temperature (RT) and continuous wave (CW) operation laser diodes emitting around 2.4μm, based on the InGaAsSb / AlGaAsSb materials system, have been realised. with a 100μm wide and 1mm long cavity laser, a maximum output power of 720mW has been obtained at 285K.
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Michel Garcia, Yves Rouillard, Eric Tournié, Michel Krakowski, "720 mW continuous wave room-temperature operation diode laser emitting at around 2.4 μm", Proc. SPIE 5989, Technologies for Optical Countermeasures II; Femtosecond Phenomena II; and Passive Millimetre-Wave and Terahertz Imaging II, 598908 (4 November 2005); doi: 10.1117/12.630661; https://doi.org/10.1117/12.630661
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KEYWORDS
Semiconductor lasers

Continuous wave operation

Antimony

Femtosecond phenomena

High power lasers

Indium gallium arsenide antimonide

Laser damage threshold

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