3 November 2005 High-power diode lasers with an aluminium-free active region at 915 nm
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Abstract
We have developed high-power lasers, which are based on an Al-free active region at 915 nm. The laser structure has very low internal losses of 0.5 cm-1, a very low transparency current density of 86 A/cm2, and a high internal quantum efficiency of 86%. Based on these good results, we have realised narrow-aperture, index-guided tapered lasers which deliver 1 W CW with and M2 beam quality factor of 3.0 using both the 1/e2 and standard-deviation methods. We have also fabricated index-guided tapered lasers with a Clarinet shape, which deliver 0.65 W CW with an M2 beam quality factor of less than 1.5 at 1/e2, and less than 2.5 using the standard deviation method.
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N. Michel, I. Hassiaoui, M. Calligaro, M. Lecomte, O. Parillaud, M. Krakowski, L. Borruel, J.-M. García-Tijero, I. Esquivias, S. Sukecki, E. C. Larkins, "High-power diode lasers with an aluminium-free active region at 915 nm", Proc. SPIE 5989, Technologies for Optical Countermeasures II; Femtosecond Phenomena II; and Passive Millimetre-Wave and Terahertz Imaging II, 598909 (3 November 2005); doi: 10.1117/12.630738; https://doi.org/10.1117/12.630738
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