7 February 2006 New mechanism of intrinsic laser-induced damage of wide band-gap transparent solids
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Recently we have discovered a new regime of ionization taking place in wide band-gap crystalline dielectrics under action of high-intensity laser radiation. Its characteristic feature is occurring of a singularity on dependence of ionization rate on laser intensity what corresponds to blow-up increasing of electron density in conduction band of irradiated material. Assuming that process referred to as collective ionization to be the starting point of initiating intrinsic bulk single-shot damage, we associate damage threshold with the singularity one. Then we consider some consequences resulting from that assumption. In particular, we analyze dependence of the threshold on laser and material parameters in order to find possibilities of experimental checking of our theoretical predictions.
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Vitali E. Gruzdev, Vitali E. Gruzdev, } "New mechanism of intrinsic laser-induced damage of wide band-gap transparent solids", Proc. SPIE 5991, Laser-Induced Damage in Optical Materials: 2005, 59910U (7 February 2006); doi: 10.1117/12.626172; https://doi.org/10.1117/12.626172


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