8 November 2005 Noble development system to achieve defect-free process for 65nm node photomasks
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Abstract
Shrinking of pattern size on photomask requires tight control on defects and CD qualities. Recent ultra resolution lithography requires tight criteria for defect. In this paper, we describe the main defect factor "re-adsorption of resist" on. This is dependent on the development process, the relationship between defect and development and/or rinse method. The hp90-65nm process needs to reduce re-adsorption of resist for improvement in defect level. The solution of this issue is the uniformed high flow for development and rinse fluid. We adopt modified development system as the intermediary to make high fluid flow possible. From our results, this system could reduce the number of defects around 70-80%. The defect size will also be reduced through this system. So, we propose that Noble development method is one of the effective process means for hp90-65nm photomask production.
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Hironori Sasaki, Shuichi Sanki, Ryugo Hikichi, Kiyoshi Ogawa, Akihiko Naito, Yukihiro Sato, Yasuyuki Kushida, Naoyuki Ishiwata, Hiroshi Maruyama, "Noble development system to achieve defect-free process for 65nm node photomasks", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59920M (8 November 2005); doi: 10.1117/12.633668; https://doi.org/10.1117/12.633668
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