4 November 2005 Approaching zero etch bias at Cr etch process
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Increasing demand for high end lithography mask especially phase shift masks and narrowing the specification, lead to development of etch processes with minimum critical dimension uniformity (CDU) and very low etch bias. The etch bias becomes one of the limiting parameters for the Cr etch process, due to strong cross links between etch bias and other etch characteristics like linearity and loading effect, thus contributing strongly to the CDU for masks with non uniform pattern distribution. The goal was to develop a Cr etch process with very low etch bias, keeping the other parameters at the same level and providing a wider process window for further optimization of the CDU, loading effect and linearity. In the paper we want to present a feasibility study of one specific approach to the mentioned methods and compare different ways for measurement of the CDU and etch bias. The work presented was done on the Applied Materials Tetra II Mask Etch system.
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Pavel Nesladek, Pavel Nesladek, Norbert Falk, Norbert Falk, Andreas Wiswesser, Andreas Wiswesser, Renee Koch, Renee Koch, Björn Sass, Björn Sass, "Approaching zero etch bias at Cr etch process", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59920N (4 November 2005); doi: 10.1117/12.631718; https://doi.org/10.1117/12.631718

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