4 November 2005 Reduction of MDP complexity through the application of OASIS based data flow
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In the IC process, the designed circuit pattern is drawn onto film or glass plate as a photo mask. This original mask is used to transform its transparent pattern onto semiconductor wafers by optical projection. To make photo mask we should convert the design data into a format that the e-beam write tool can understand. This MDP (Mask Data Preparation) process is getting more and more complicated to support many kinds of e-beam data format which is required not only for each electron beam writers but die to database inspection tools. It gives us a burden to treat various MDP flow and this may impact on turn around time (TAT). Therefore, it becomes more necessary to make MDP flow simpler by unifying the various mask data formats. Moreover it is required to suppress huge data volume due to design rule shrink and aggressive OPC. To address these issues, the Open Artwork System Interchange Standard (OASISTM) has been approved by the EDA industry and is officially announced by SEMI Data Path Task Force. OASIS data format allows the reduction in file size compared to GDSII while the processing time such as MRC and MDP is not influenced. Also OASIS is effective in reducing complexity of mask data preparation flow. In this paper, the implementation of OASIS format within mask data preparation flow will be discussed and experimental results of OASIS-based data flow will be shown with comparing to traditional GDSII/MEBES-based data flow.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sung-Hoon Jang, Sung-Hoon Jang, Ji-Hyeon Choi, Ji-Hyeon Choi, Ji-Soong Park, Ji-Soong Park, Seong-Woon Choi, Seong-Woon Choi, Woo-Sung Han, Woo-Sung Han, } "Reduction of MDP complexity through the application of OASIS based data flow", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 599212 (4 November 2005); doi: 10.1117/12.632370; https://doi.org/10.1117/12.632370


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