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4 November 2005 Integration of photolithographic simulation and a mask repair system into a single concurrent work cell
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In prior work, the capability of mask-topography (AFM) based photolithographic simulation (SOLID-CTM) to minimize the number of aerial image microscope simulation (AIMSTM) evaluation related mask load/unload cycles in a repair tool was demonstrated for programmed binary edge defects at 248 nm wavelengths and various stages of defect repair. The next stage is to bring the concept of photolithographic mask simulation concurrent with defect repair closer to a production-level system. This was done by comparing SOLID-CTM simulations generated directly from uploaded AFM topography data with 193 nm AIMSTM results for a set of patterns and defect repairs. The results have been successfully compared in both best and through-focus evaluations. With this increased knowledge and experience, it becomes possible to not only increase the efficiency and yield of the repair of any mask defect, but to also further optimize each individual repair with feedback as to the potential impact on the lithography process.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tod Robinson, Peter Brooker, Ron Bozak, and David A. Lee "Integration of photolithographic simulation and a mask repair system into a single concurrent work cell", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59921D (4 November 2005);


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