5 November 2005 CD metrology of binary and phase shift masks using scatterometry
Author Affiliations +
Abstract
In this paper, we report on a Scatterometry based metrology system that provides line width and thickness measurements on binary, APSM, EPSM masks both on FCCD (final check CD) and DCCD (develop check CD), fabricated on 193nm process. Measurements were made with scatterometer in DUV to visual wavelength range. Calculation of profile information was performed by a library-based analysis software. We characterized the CD uniformity, linearity, trench depth uniformity. Results show that linearity measured from fixed-pitch, varying line/space ratio targets show good correlation to top-down CD-SEM, meanwhile linearity from wide range of different pitch generally does not correlate well and therefore post-measurement calibration is needed. Depth measurements from APSM show that scatterometer makes good correlations to AFM. The effect of optical properties of the film layers on metrology performance is discussed. The data show that Scatterometry provides a nondestructive of monitoring basic etch profile combined with relatively little time loss from CD measurement step.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kyung M. Lee, Kyung M. Lee, Sanjay Yedur, Sanjay Yedur, Milad Tabet, Milad Tabet, Malahat Tavassoli, Malahat Tavassoli, } "CD metrology of binary and phase shift masks using scatterometry", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59921I (5 November 2005); doi: 10.1117/12.631971; https://doi.org/10.1117/12.631971
PROCEEDINGS
9 PAGES


SHARE
Back to Top