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4 November 2005 Semiconductor pattern analysis with induced polarization
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Abstract
Image contrast enhancement, resolution improvement and accurate height information are obtained by near-field induced polarization imaging using a solid immersion lens (SIL) microscopy. A semiconductor PC processor is investigated by this imaging technology. With 520nm linear polarization illumination, around 100nm feature size is resolvable, and topographical information is also achieved from this induced polarization image. We demonstrate this near-field induced polarization imaging is a fast acquisition, large field and high resolution metrology solution.
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Tao Chen, Tom Milster, and Seung Hune Yang "Semiconductor pattern analysis with induced polarization", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59921L (4 November 2005); https://doi.org/10.1117/12.632240
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