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7 November 2005 Magnetron reactive sputtering of TaN and TaON films for EUV mask applications
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We have developed and characterized a stack of TaN (absorber) and TaON (ARC) using reactive magnetron sputtering method. Two DOE (design of experiments) were performed with varying gas and power parameters and their effects on the various film parameters are discussed. We characterized the stress, uniformity, reflectivity (for defect inspection and EUV wavelengths), defect adders, and etch performance. Film property characterization was performed with AFM, Optical reflectance measurement tool, Particle inspection tool and profilometer. Optimized film stack met or exceeded ITRS guideline for EUV lithography mask with film stress less than 200MPa, inspection wavelength reflectivity at 9%, and thickness uniformity less than 5%. Defect adder number (< 0.5 / cm2) was a strong function of underlying film surface roughness and cleanliness of surface as well as deposition parameters.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kyung M. Lee, Malahat Tavassoli, Alan Stivers, and Barry Lieberman "Magnetron reactive sputtering of TaN and TaON films for EUV mask applications", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59922B (7 November 2005);

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