Hybrid ORC method for low K1 process

Byungho Nam; Jaeseung Choi; Yeongbae Ahn; Cheolkyun Kim; Hyoungsoon Yune; James Moon; Donggyu Yim; Jinwoong Kim

doi:10.1117/12.632023

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7 November 2005 Hybrid ORC method for low K1 process

Byungho Nam, Jaeseung Choi, Yeongbae Ahn, Cheolkyun Kim, Hyoungsoon Yune, James Moon, Donggyu Yim, Jinwoong Kim

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Proceedings Volume 5992, 25th Annual BACUS Symposium on Photomask Technology; 59922T (2005) https://doi.org/10.1117/12.632023
Event: SPIE Photomask Technology, 2005, Monterey, California, United States

Abstract

In recent years, more burden is placed on OPC(Optical Proximity effect Correction) and ORC(Optical Rule Check) like never before due to low process margin caused by adoption of "Low K1" technology on lithography process. Normally, chip is composed of cell, core and periphery regions. Each of these regions has different characteristics patterning wise but usually the region with high density has much more chance for pinch, bridge or killing error and also has small process window. So verification of OPCed data must be highly accurate with fast operation speed. In this paper we developed full chip based ORC(Optical Rule Check)which satisfies both need, accuracy and speed. The result of pinch, bridge and small process window verification of Hybrid ORC will be shown followed by comparison of rule and model ORC methods.

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Byungho Nam, Jaeseung Choi, Yeongbae Ahn, Cheolkyun Kim, Hyoungsoon Yune, James Moon, Donggyu Yim, and Jinwoong Kim "Hybrid ORC method for low K1 process", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59922T (7 November 2005); https://doi.org/10.1117/12.632023

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