You have requested a machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Neither SPIE nor the owners and publishers of the content make, and they explicitly disclaim, any express or implied representations or warranties of any kind, including, without limitation, representations and warranties as to the functionality of the translation feature or the accuracy or completeness of the translations.
Translations are not retained in our system. Your use of this feature and the translations is subject to all use restrictions contained in the Terms and Conditions of Use of the SPIE website.
7 November 2005How large MEEF is acceptable for the low-k1 lithography?
In the photo-lithography process, a mask is one of the most important items because its imperfection induces the variation of critical dimension (CD) and becomes the source of the CD error on the wafer. The CD error amplification is denoted by using Mask Error Enhancement Factor (MEEF)(1,2) and related to the photo-lithography process. Nowadays MEEF increases conspicuously as the device shrinks so fast. Therefore the mean-to-target (MTT) and the uniformity of the mask CD are very important factors to reduce the effect of high MEEF. In general, the process constant k1 factor has been cited to denote the capability of the photo process for a certain resolution. However MEEF can describe the process difficulty well because it depends on the layout design and the process conditions although the designed patterns have the same design rule.
In this study the MEEFs of sub-80nm DRAM patterns(3) are discussed with the process constant k1, MTT and the mask CD uniformity. And then the results are compared with the simulation and the wafer process data. Considering the mask specification calculated from the wafer specification and MEEF, the photo tool and process upgrade is necessary to reduce MEEF and to have the mask fabrication tolerance.
The alert did not successfully save. Please try again later.
Dongseok Nam, Dong-Gun Lee, Byunggook Kim, Seong-Yong Moon, Seong-Woon Choi, Woo-Sung Han, "How large MEEF is acceptable for the low-k1 lithography?," Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59922W (7 November 2005); https://doi.org/10.1117/12.632066