Advanced e-beam CAR resist evaluation for 65nm generation

Gordon Chan; Orson Lin; Wesen Tseng; Booky Lee; Torey Huang; Makoto Kozuma

doi:10.1117/12.632052

8 November 2005 Advanced e-beam CAR resist evaluation for 65nm generation

Gordon Chan, Orson Lin, Wesen Tseng, Booky Lee, Torey Huang, Makoto Kozuma

Proceedings Volume 5992, 25th Annual BACUS Symposium on Photomask Technology; 59923B (2005) https://doi.org/10.1117/12.632052
Event: SPIE Photomask Technology, 2005, Monterey, California, United States

Abstract

Chemically amplified resists, CAR, and 50kV e-beam writers have been applied for the most advance mask manufacturing. To fulfill the requirement of 65nm generation a good performance resist played an important role. In this work, two advanced positive and negative CAR resist has been evaluated for 65nm photomask process with a 50kV e-beam pattern generator in an advanced process line. For 65nm node not only the resolution is needed to be improved but also the cirtical dimension(CD) control will be more critical than previous generation. So the evaluation is focus on the CD performance, resolution, profile, e-beam sensitivity, line edge roughness(LER), etc.

Citation Download Citation

Gordon Chan, Orson Lin, Wesen Tseng, Booky Lee, Torey Huang, and Makoto Kozuma "Advanced e-beam CAR resist evaluation for 65nm generation", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59923B (8 November 2005); https://doi.org/10.1117/12.632052

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