Haze defect control and containment in a high volume DRAM manufacturing environment

Jerry X. Chen; Maihan Nguyen; Osamu Arasaki; Tammy Maraquin; Daniel Sawyer; Pedro Morrison

doi:10.1117/12.632188

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8 November 2005 Haze defect control and containment in a high volume DRAM manufacturing environment

Jerry X. Chen, Maihan Nguyen, Osamu Arasaki, Tammy Maraquin, Daniel Sawyer, Pedro Morrison

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Proceedings Volume 5992, 25th Annual BACUS Symposium on Photomask Technology; 59923I (2005) https://doi.org/10.1117/12.632188
Event: SPIE Photomask Technology, 2005, Monterey, California, United States

Abstract

Haze and other progressive reticle defects have been known in the semiconductor industry for more than a decade [1]. Extensive research and experiments have been carried out to determine the sources and origins of the progressive haze growth, but the true mechanisms of its cause are still under speculation. To minimize the wafer yield loss at Samsung Austin Semiconductor (SAS), we introduced a practical method to control the haze defects in a DRAM manufacturing environment that integrates reticle and wafer inspections, reticle cleaning, and a dose-based and time-based control forecast software system. This development has been proven to be very effective in controlling the haze defects and reducing the related yield loss while still supporting high volume wafer production.

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Jerry X. Chen, Maihan Nguyen, Osamu Arasaki, Tammy Maraquin, Daniel Sawyer, and Pedro Morrison "Haze defect control and containment in a high volume DRAM manufacturing environment", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59923I (8 November 2005); https://doi.org/10.1117/12.632188

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