8 November 2005 Enhanced resist and etch CD control by design perturbation
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Abstract
Etch dummy features are used in the mask data preparation flow to reduce critical dimension (CD) skew between resist and etch processes and improve the printability of layouts. However, etch dummy rules conflict with SRAF (Sub-Resolution Assist Feature) insertion because each of the two techniques requires specific spacings of poly-to-assist, assist-to-assist, active-to-etch dummy and dummy-to-dummy. In this work, we first present a novel SRAF-aware etch dummy insertion method (SAEDM) which optimizes etch dummy insertion to make the layout more conducive to assist-feature insertion after etch dummy features have been inserted. However, placed standard-cell layouts may not have the ideal whitespace distribution to allow for optimal etch dummy and assist-feature insertions. Since placement of cells can create forbidden pitch violations, the placer must generate assist-correct and etch dummy-correct placements. This can be achieved by intelligent whitespace management in the placer. We describe a novel dynamic programming-based technique for etch-dummy correctness (EtchCorr) which can be combine with the SAEDM in detailed placement of standard-cell designs. Our algorithm is validated on industrial testcases with respect to wafer printability, database complexity and device performance.
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Puneet Gupta, Puneet Gupta, Andrew B. Kahng, Andrew B. Kahng, Chul-Hong Park, Chul-Hong Park, } "Enhanced resist and etch CD control by design perturbation", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59923P (8 November 2005); doi: 10.1117/12.632753; https://doi.org/10.1117/12.632753
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