Translator Disclaimer
Paper
9 November 2005 Advanced edge roughness measurement application for mask metrology
Author Affiliations +
Abstract
Mask Manufacturers are continuously asked to supply reticles with reduced CD (Critical Dimension) specification, such as CD Uniformity and Mean to target. To meet this on-going trend the industry is in a quest for higher resolution metrology tools, which in-turn drives the use of SEM metrology into standard mask manufacturing process. As dimensions of integrated circuit features reduce, the negative effects of roughness of the features, and/or of components such as photo-resist and ancillary structures used to produce the features, become more pronounced since there is not necessarily a corresponding reduction of roughness with dimension reduction. As a result of the increased problems, metrics that quantify roughness of specific sections of an integrated circuit have been developed; for example, line edge roughness (LER) measures the roughness of a linear edge. This paper concentrates on one specific area of the Mask Metrology, being measurement of the different Roughness metrics of the reticle features such as lines and contacts, using a new SEM metrology tool, the Applied Materials RETicleSEM. We describe the comprehensive Roughness Analysis Algorithm package that performs precise measurements of the different Roughness metrics including Fourier analysis, auto-correlation function and correlation length. This package can be used to isolate and characterize the roughness of specific wavelength ranges that may be of interest for mask manufacturing process and/or mask quality control considerations. We conclude with sample results of Roughness Analysis on real SEM images of Reticle lines. The influence of CD roughness on the precision of measurements is considered. The proof that long-wave roughness can be one from the sources of flyers during CD measurements is presented.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Chase, R. Kris, R. Katz, A. Tam, L. Gershtein, R. Falah, and N. Wertsman "Advanced edge roughness measurement application for mask metrology", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59924N (9 November 2005); https://doi.org/10.1117/12.632439
PROCEEDINGS
7 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Through quartz metrology in an automated chemical process
Proceedings of SPIE (February 15 1994)
Zero-bias PBS process for 5X reticles
Proceedings of SPIE (January 01 1992)
Reticle CD-SEM for 65-nm technology node and beyond
Proceedings of SPIE (December 06 2004)
Reticle processing induced proximity effects
Proceedings of SPIE (August 16 2002)

Back to Top