8 November 2005 Image placement accuracy of single-membrane stencil masks for e-beam lithography
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Three stencil masks with simple die layouts on 24 mm x 24 mm Si membranes are made to compare simulation and experiment on image placement (IP). A pseudo finite element (FE) modeling is adopted. Displacements predicted by simulation are found to be smaller than experimental values, but both agree qualitatively. Four stencil masks with die layouts that model on ULSI hole layers in 30% opening ratio and pattern arrangement are successfully made. Displacements are reduced to 1/4 by adopting IP correction. The IP correction of EB data is found to be a useful method of reducing IP error.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Minoru Kitada, Minoru Kitada, Satoshi Yusa, Satoshi Yusa, Naoko Kuwahara, Naoko Kuwahara, Hiroshi Fujita, Hiroshi Fujita, Tadahiko Takikawa, Tadahiko Takikawa, Hisatake Sano, Hisatake Sano, Morihisa Hoga, Morihisa Hoga, } "Image placement accuracy of single-membrane stencil masks for e-beam lithography", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59924R (8 November 2005); doi: 10.1117/12.630114; https://doi.org/10.1117/12.630114


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