8 November 2005 Characterization and qualification of the Jeol JBX9000-MVII e-beam writer for the 90nm node and its integration in a photomask manufacturing line
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Abstract
The advanced Jeol JBX9000MVII 50kV electron-beam lithography system has been successfully installed at DNP Photomask Europe and timely qualified for the 90nm technology node. The overall performances of this writing tool have thoroughly been assessed on positive and negative tone chemically amplified resists (CARs), fully exploiting the advanced proximity effect correction (PEC) capabilities of the system and carefully optimizing the overall process. The reported results show the machine capabilities in terms of global and local pattern placement and CD accuracy, CD linearity, pattern fidelity, along with data on some of the most demanding model-based OPC validation patterns. Details on process characterization and tuning effectiveness on resist and chrome are shown, including the PEC approach. Based on the stringent metrology correlation achieved with DNP Japan manufacturing site, the data show a one-to-one compatibility with the sister tool installed there, even on the most critical OPC structures. Consequently, the complete product interchangeability between the two manufacturing sites has been achieved.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Luigi Raffaele, Luigi Raffaele, Carlo Pogliani, Carlo Pogliani, Gian Luca Cassol, Gian Luca Cassol, Giovanni Bianucci, Giovanni Bianucci, Shiaki Murai, Shiaki Murai, Shoichi Murata, Shoichi Murata, Ryugo Hikichi, Ryugo Hikichi, Hidenao Katsuki, Hidenao Katsuki, Shigeru Noguchi, Shigeru Noguchi, } "Characterization and qualification of the Jeol JBX9000-MVII e-beam writer for the 90nm node and its integration in a photomask manufacturing line", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59924W (8 November 2005); doi: 10.1117/12.632399; https://doi.org/10.1117/12.632399
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