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9 November 2005 Mask repair for the 65nm technology node
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Abstract
Photomask repair has been acknowledged as a value creation step in the mask process flow. As technology pushes forward, the need for more advanced mask repair is apparent. This paper introduces a new mask repair tool directed at the 65 nm node and extendable to the 45 nm node, the nm650de (digital extendible). The system provides high throughput, advanced imaging capabilities, tight control in X, Y, and minimal Z drift with very low noise. Results are shown for the repair of edge defects in tight lines and spaces on both Cr binary and MoSi (EPSM) masks. Statistical analysis is conducted with respect to edge placement, surface damage, and 193 nm AIMSTM, "transmission" (relative normalized peak intensity). This analysis is then compared to specifications for each technology node.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tod Robinson, Andrew Dinsdale, Ron Bozak, Roy White, David A Lee, and Ken Roessler "Mask repair for the 65nm technology node", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59924Z (9 November 2005); https://doi.org/10.1117/12.634758
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