Simulation-based scattering bar generation for 65nm and beyond

Chi-Yuan Hung; Qingwei Liu; Liguo Zhang

doi:10.1117/12.629798

9 November 2005 Simulation-based scattering bar generation for 65nm and beyond

Chi-Yuan Hung, Qingwei Liu, Liguo Zhang

Proceedings Volume 5992, 25th Annual BACUS Symposium on Photomask Technology; 599252 (2005) https://doi.org/10.1117/12.629798
Event: SPIE Photomask Technology, 2005, Monterey, California, United States

Abstract

As critical dimension decreases rapidly, scattering bars are widely implemented to increase lithographic common process window. However, collecting rules for applying scattering bar is extremely time-consuming, because of huge numbers of scattering bar split conditions should be considered. The objective of this work is to use Calibrated OPC model to simulate and insert scattering bars for hole-layers. Maximum/optimized process margin can be achieved (under fixed process condition) by calculating the EPE variation due to dose and focus variation at different sets of sub design rule assistant feature conditions, which we call pseudo process window simulation. Then one theoretically best condition for applying SRAF can be found. According this best condition, we can dramatically narrow down the search range of the SRAF rules in wafer-lever experiments. As a result, technology development cycle time can be shortened exponentially. And finally, the simulation data of our work will be shown and compared down to wafer level.

Citation Download Citation

Chi-Yuan Hung, Qingwei Liu, and Liguo Zhang "Simulation-based scattering bar generation for 65nm and beyond", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 599252 (9 November 2005); https://doi.org/10.1117/12.629798

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