Multilayered diluted magnetic semiconductor structures and 2DEG

H. L. Grubin; Dwight L. Woolard

doi:10.1117/12.633578

4 November 2005 Multilayered diluted magnetic semiconductor structures and 2DEG

H. L. Grubin, Dwight L. Woolard

Proceedings Volume 5995, Chemical and Biological Standoff Detection III; 59950Q (2005) https://doi.org/10.1117/12.633578
Event: Optics East 2005, 2005, Boston, MA, United States

Abstract

The 2DEG adjacent to a diluted magnetic semiconductor heterobarrier is altered in the presence of a magnetic field. The alteration is dependent upon at least three factors: the Zeeman energy, the self consistent potential energy and the equilibrium distribution. Concentrating on the first two features we present results for the alteration of the 2DEG for a spin heterodiode configuration and for a single barrier DMS structure, demonstrating that the 2DEG can be modified by a magnetic field, thereby permitting the magnetic field to function as a gate in two terminal structures with spin dependent contacts.

Citation Download Citation

H. L. Grubin and Dwight L. Woolard "Multilayered diluted magnetic semiconductor structures and 2DEG", Proc. SPIE 5995, Chemical and Biological Standoff Detection III, 59950Q (4 November 2005); https://doi.org/10.1117/12.633578

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