4 November 2005 Multilayered diluted magnetic semiconductor structures and 2DEG
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Proceedings Volume 5995, Chemical and Biological Standoff Detection III; 59950Q (2005) https://doi.org/10.1117/12.633578
Event: Optics East 2005, 2005, Boston, MA, United States
The 2DEG adjacent to a diluted magnetic semiconductor heterobarrier is altered in the presence of a magnetic field. The alteration is dependent upon at least three factors: the Zeeman energy, the self consistent potential energy and the equilibrium distribution. Concentrating on the first two features we present results for the alteration of the 2DEG for a spin heterodiode configuration and for a single barrier DMS structure, demonstrating that the 2DEG can be modified by a magnetic field, thereby permitting the magnetic field to function as a gate in two terminal structures with spin dependent contacts.
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H. L. Grubin, H. L. Grubin, Dwight L. Woolard, Dwight L. Woolard, } "Multilayered diluted magnetic semiconductor structures and 2DEG", Proc. SPIE 5995, Chemical and Biological Standoff Detection III, 59950Q (4 November 2005); doi: 10.1117/12.633578; https://doi.org/10.1117/12.633578

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