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22 November 2005 Photoluminescence properties of Er-doped Y2O3 thin films by radical-enhanced atomic layer deposition
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Abstract
Erbium-doped Y2O3 thin films were synthesized by combining radical-enhanced atomic layer deposition (RE-ALD) of Y2O3 and Er2O3 in an alternating fashion at 350°C. The Er doping level was precisely controlled to range from 6 to 14 at.% by varying the ratio of Y2O3:Er2O3 cycles during deposition. At 350°C, the films were found to be polycrystalline, showing a preferential growth direction in the [111] direction. Room-temperature photoluminescence (PL) at 1.54 μm, characteristic of the Er3+ intra 4f transition, was observed in a 500-Å Er-doped (6 at.%) Y2O3 film, showing well resolved Stark features indicating the proper incorporation of Er in the Y2O3 host. Extended X-ray absorption fine structure (EXAFS) analysis revealed a six-fold coordination of Er by O in all samples, suggesting that the PL quenching observed at high Er concentration (>8 at.%) is likely dominated by Er ion-ion interaction and not by Er immiscibility in the Y2O3 host. The effective absorption cross section for Er3+ ions incorporated in Y2O3 was determined to be ~10-18 cm2, about three orders of magnitude larger than the direct optical absorption cross section reported for Er3+ ions in a stoichiometric SiO2 host.
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Trinh T. Van, John Bargar, Roman Ostroumov, Kang L. Wang, and Jane P. Chang "Photoluminescence properties of Er-doped Y2O3 thin films by radical-enhanced atomic layer deposition", Proc. SPIE 6002, Nanofabrication: Technologies, Devices, and Applications II, 60020H (22 November 2005); https://doi.org/10.1117/12.634531
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