10 November 2005 Reactive ion etching of motheye and photonic crystal silicon nanostructures using CBrF3
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Abstract
The results of experimental studies that investigate the reactive ion etching characteristics of Si nanostructures using CBrF3 plasmas is reported. Etch rates and anisotropies were studied as functions of RF and ICP power (0 - 200 W), gas pressure (10 - 190 mT), gas flow, and O2 gas mixtures in a commercial ICP etching system. Both isotropic and anisotropic etching regimes were identified, and used to create < 600 nm feature periodic motheye and photonic crystal nanostructures that possess pyramidal and near- anisotropic profiles, respectively. The ability of CBrF3 to effectively control sidewall profile and etch depth when used with different resist mask profiles makes it an attractive etchant for the fabrication of periodic optical nanostructures that have stringent sidewall and nano-tolerance requirements.
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G. J. Sonek, G. J. Sonek, V. G. Kreismanis, V. G. Kreismanis, } "Reactive ion etching of motheye and photonic crystal silicon nanostructures using CBrF3", Proc. SPIE 6002, Nanofabrication: Technologies, Devices, and Applications II, 600219 (10 November 2005); doi: 10.1117/12.631025; https://doi.org/10.1117/12.631025
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