12 November 2005 A nano-scale quantum dot photodetector by self-assembly
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Modern CMOS transistors will not scale well in the next decade due to leakage currents, sources of variation, and platform requirements. To keep the cost per transistor decreasing, and to realize the feasibility of ultra-high density integrated circuits, low power techniques and efficiency optimization are being explored to counter these problems. Parallel to the development of electronic VLSI, using photons as a means of carrying information has been an appealing approach, due to the high speed and broad bandwidth of light, and the elimination of on-chip parasitic and electro-magnetic interference as its electronic counterpart. This paper focuses on photonic integrated circuits to solve the high-density problem, and presents a design for a nano-scale QD optical transducer (QDOT) that will function as a near-field photodetector and that can easily interface into a self- assembled QD integrated circuit (QDIC). The optical transducer consists of a QD between two metal electrodes. The tunneling current between the metal electrodes is mediated by the QD and can be gated by changing the optical signal intensity impinging on the QD. The device can be fabricated via self-assembly using QDs. In this method, a chemistry linker such as DNA or APTES is covalently bound to pre- defined zones on a substrate. The global location of these zones is defined via electron-beam lithography (EBL). Numerical simulations are discussed and ideal characteristics of the device are presented.
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Michael C. Hegg, Michael C. Hegg, Matthew P. Horning, Matthew P. Horning, Lih Y. Lin, Lih Y. Lin, } "A nano-scale quantum dot photodetector by self-assembly", Proc. SPIE 6003, Nanostructure Integration Techniques for Manufacturable Devices, Circuits, and Systems: Interfaces, Interconnects, and Nanosystems, 600308 (12 November 2005); doi: 10.1117/12.631879; https://doi.org/10.1117/12.631879

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