17 November 2005 An InAs/GaAs quantum dot long wave infrared photodetector with high photodectivity at 180K
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Proceedings Volume 6008, Nanosensing: Materials and Devices II; 60080S (2005) https://doi.org/10.1117/12.630204
Event: Optics East 2005, 2005, Boston, MA, United States
Abstract
We present an InAs/GaAs quantum dot long wave infrared photodetector based on nonlinear photocurrent generation process. A dark current suppression factor of over 104 is obtained at 180K. Photocurrent generation process was simulated and compared with conventional linear absorption photocurrent generation. A photodetectivity of nearly 1010cmHz1/2/W were obtained at 180K. This kind long wave infrared photodetector is promising in working at air-cooled temperature.
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Xuejun Lu, Xuejun Lu, } "An InAs/GaAs quantum dot long wave infrared photodetector with high photodectivity at 180K", Proc. SPIE 6008, Nanosensing: Materials and Devices II, 60080S (17 November 2005); doi: 10.1117/12.630204; https://doi.org/10.1117/12.630204
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