17 November 2005 Ultra-narrow width air-gap Si FET integrated with micro-fluidic delivery for charge based sensing
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Proceedings Volume 6008, Nanosensing: Materials and Devices II; 600818 (2005) https://doi.org/10.1117/12.630905
Event: Optics East 2005, 2005, Boston, MA, United States
Abstract
An ultra-narrow width silicon field effect transistor (FET) with a suspended gate, integrated with on-chip microfluidic delivery system is described. The device is designed to be used as an FET based sensor for sequencing of DNA, RNA and proteins, by detecting the local charge variations along the chains of these molecules as they are passed between the gate and the channel of the FET in an aqueous solution. A side-gated FET structure is demonstrated with sub-10 nm width, successfully suppressing the electrical leakage currents at the device edges. Side-gated FET structure allows electrostatic confinement of the electrons in the channel for increased spatial resolution.
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Ali Gokirmak, Ali Gokirmak, Sandip Tiwari, Sandip Tiwari, } "Ultra-narrow width air-gap Si FET integrated with micro-fluidic delivery for charge based sensing", Proc. SPIE 6008, Nanosensing: Materials and Devices II, 600818 (17 November 2005); doi: 10.1117/12.630905; https://doi.org/10.1117/12.630905
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