24 October 2005 Study of epitaxial lateral overgrowth of GaN for application in the fabrication of optoelectronic devices
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In this research effort, epitaxial lateral overgrowth (ELOG) of GaN on sapphire was performed by low-pressure metalorganic chemical vapor deposition (MOCVD) in a horizontal reactor. All ELOG growths were stopped prior to complete coalescence, and the resulting cross-sections were characterized by scanning electron microscopy (SEM). Both vertical {1120} and inclined sidewalls were observed. Inclined {112n}sidewalls of various angles (n ≈ 2-2.2) were found as previously reported in the literature1. Both one-step and two-step ELOG processes were used to control the overgrowth geometry. It was confirmed that sidewall formation and growth rates are closely correlated with multiple parameters including temperature and V/III ratio1. It was also found that substrate rotation greatly influences sidewall evolution and vertical growth rate. A conceptual model was begun to completely describe the ELOG process in a horizontal reactor. It is speculated that the different sidewalls observed as a function of substrate orientation result from variation in the local V/III ratio. Once developed, the final model will be used to control the sidewalls in the growth of ELOG structures for the fabrication of novel optoelectronic devices.
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N. J. Berry Ann, N. J. Berry Ann, L. E. Rodak, L. E. Rodak, Kalyan Kasarla, Kalyan Kasarla, Nanying Yang, Nanying Yang, D. Korakakis, D. Korakakis, } "Study of epitaxial lateral overgrowth of GaN for application in the fabrication of optoelectronic devices", Proc. SPIE 6017, Nanophotonics for Communication: Materials and Devices II, 60170D (24 October 2005); doi: 10.1117/12.630965; https://doi.org/10.1117/12.630965

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