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23 November 2005 InP-based vertical cavity surface emitting lasers for 10G applications
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Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 602001 (2005) https://doi.org/10.1117/12.638988
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China
Abstract
InP-based vertical cavity surface emitting lasers (VCSELs) with AlGaInAs QWs and AlGaInAs/InP DBR have been demonstrated. Over 2 mW and 0.8 mW single-mode powers at 1.3 μm have been achieved at 25 °C and 85 °C, respectively. A high eye-diagram margin at 10 Gbit/s modulation was demonstrated using 13 GHz maximum relaxation oscillation frequency VCSELs. This high relaxation oscillation frequency enables the achievement, without optical isolator, of error-free transmission under 10 Gbit/s modulation with high optical reflection. To achieve stable polarization operation, 1.3 μm VCSELs on InP(311)A substrate have been realized and showed very stable polarization behavior.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Nishiyama, C. Caneau, and C. E. Zah "InP-based vertical cavity surface emitting lasers for 10G applications", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 602001 (23 November 2005); doi: 10.1117/12.638988; https://doi.org/10.1117/12.638988
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