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1 December 2005 High-power InGaAs VCSEL's single devices and 2-D arrays
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Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 602002 (2005)
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China
We report on bottom-emitting vertical-cavity surface-emitting lasers (VCSEL's) and laser arrays providing high output powers in the 980-nm wavelength regime. Single devices with active diameters of 500 μm show high output powers of 1.95 W at room temperature. Its threshold current is 510 mA, and the maximum spatially averaged optical power density is 0.93 kW/cm2. A 16 elements array with 200μm aperture size (250μm center spacing) of individual elements shows a CW output power of 1.21W at room temperature, resulting in a average optical power density of 1KW/cm2. The threshold current of the array is 1.32A and the lasing peak wavelength is 981.9 nm. The distinction of emission spectrums between the single device and the array is discussed.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Te Li, Yongqiang Ning, Yanfang Sun, Li Qin, Changling Yan, Yun Liu, and Lijun Wang "High-power InGaAs VCSEL's single devices and 2-D arrays", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 602002 (1 December 2005); doi: 10.1117/12.635658;


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