Translator Disclaimer
1 December 2005 High-power InGaAs VCSEL's single devices and 2-D arrays
Author Affiliations +
Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 602002 (2005) https://doi.org/10.1117/12.635658
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China
Abstract
We report on bottom-emitting vertical-cavity surface-emitting lasers (VCSEL's) and laser arrays providing high output powers in the 980-nm wavelength regime. Single devices with active diameters of 500 μm show high output powers of 1.95 W at room temperature. Its threshold current is 510 mA, and the maximum spatially averaged optical power density is 0.93 kW/cm2. A 16 elements array with 200μm aperture size (250μm center spacing) of individual elements shows a CW output power of 1.21W at room temperature, resulting in a average optical power density of 1KW/cm2. The threshold current of the array is 1.32A and the lasing peak wavelength is 981.9 nm. The distinction of emission spectrums between the single device and the array is discussed.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Te Li, Yongqiang Ning, Yanfang Sun, Li Qin, Changling Yan, Yun Liu, and Lijun Wang "High-power InGaAs VCSEL's single devices and 2-D arrays", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 602002 (1 December 2005); doi: 10.1117/12.635658; https://doi.org/10.1117/12.635658
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Fabrication of the new structure 980nm VCSEL
Proceedings of SPIE (November 06 2016)
High-power VCSELs single devices and 2-D arrays
Proceedings of SPIE (December 21 2005)
High-power InGaAs/GaAs VCSEL's two-dimension arrays
Proceedings of SPIE (December 23 2005)
980 nm bottom emitting VCSEL with an output power of...
Proceedings of SPIE (January 30 2005)
High power VCSEL device with periodic gain active region
Proceedings of SPIE (November 18 2007)
1.3 µm VCSELs InGaAs GaAs, GaInNAs GaAs multiple quantum...
Proceedings of SPIE (February 22 2007)

Back to Top