5 December 2005 Study of low temperature GaAs/InP wafer bonding
Author Affiliations +
Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 60200I (2005) https://doi.org/10.1117/12.635893
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China
Abstract
The low temperature bonding of GaAs/InP wafers is successfully realized by a new surface treatment at 380°. The properties of the bonded structures are studied in terms of the interface shape, electrical and optical characteristic. The low temperature bonding of GaAs/InP wafers is successfully realized by a new surface treatment at 380°. In this method, the surfaces of two wafers are etched by sulfuric solution. Then following a thermal annealing process. The properties of the bonded structures are studied in terms of the interface shape, electrical and optical characteristic through transmission electron microscope (SEM), interface I-V curve, X-ray diffraction (XRD), photoluminescence (PL) spectra, and so on. The optical characteristic of In0.53Ga0.47As/InP multi-quantum wells (MQWs) grown on an InP substrate, which was bonded to GaAs substrate was investigated by measuring photoluminescence (PL) spectra at room temperature. After bonding, neither wavelength shift nor degradation of full-width at half maximum (FWHM) was observed. And the PL intensities of the bonding sample increased about 50%. The bonding strength was found to be sufficiently high and could withstand the subsequent etching and polishing procedures of the bonded wafers. This low temperature wafer bonding method is very attractive to realize optical devices such as lasers, photodetectors and optical waveguides on lattice-mismatched substrates.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xingyan Wang, Xingyan Wang, Hui Huang, Hui Huang, Qi Wang, Qi Wang, Xiaomin Ren, Xiaomin Ren, Yongqing Huang, Yongqing Huang, } "Study of low temperature GaAs/InP wafer bonding", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60200I (5 December 2005); doi: 10.1117/12.635893; https://doi.org/10.1117/12.635893
PROCEEDINGS
7 PAGES


SHARE
Back to Top