Paper
5 December 2005 High-output very small aperture laser and its near-field distribution properties
Author Affiliations +
Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 60200L (2005) https://doi.org/10.1117/12.635973
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China
Abstract
A Very-Small-Aperture Laser with a 250X500 nm2 aperture has been created on a 650nm edge emitting LD. The highest far-field output power is 1.9mW and the power per unit emission area is about 15mW/μm2. The special fabrication process and high output power mechanism are demonstrated respectively. The near-field distribution properties are also analyzed theoretically and experimentally.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Qiaoqiang Gan, Suofeng Song, and Lianghui Chen "High-output very small aperture laser and its near-field distribution properties", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60200L (5 December 2005); https://doi.org/10.1117/12.635973
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KEYWORDS
Near field

Gold

Near field optics

Diodes

Semiconductor lasers

Metals

Data storage

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