5 December 2005 High-output very small aperture laser and its near-field distribution properties
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Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 60200L (2005) https://doi.org/10.1117/12.635973
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China
Abstract
A Very-Small-Aperture Laser with a 250X500 nm2 aperture has been created on a 650nm edge emitting LD. The highest far-field output power is 1.9mW and the power per unit emission area is about 15mW/μm2. The special fabrication process and high output power mechanism are demonstrated respectively. The near-field distribution properties are also analyzed theoretically and experimentally.
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Qiaoqiang Gan, Qiaoqiang Gan, Suofeng Song, Suofeng Song, Lianghui Chen, Lianghui Chen, } "High-output very small aperture laser and its near-field distribution properties", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60200L (5 December 2005); doi: 10.1117/12.635973; https://doi.org/10.1117/12.635973
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