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5 December 2005 The reliability of tunnel junction regenerated light emitting diodes
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Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 60201X (2005) https://doi.org/10.1117/12.635049
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China
Abstract
The theory of Light Emitting Diodes(LEDs) life tests and mathematic model of life tests were introduced. The performance of LEDs was affected by the drive current and by the ambient temperature. Life tests of tunnel junction regenerated AlGaInP LEDs were performed at different currents and ambient temperatures. On axis output intensity of tunnel junction regenerated LED had decreased 35.53% after 5203 hours at 30mA and 25°C. At the ambient temperature of 80°C, on axis output intensity of tunnel junction regenerated LED had degraded 19.26% after 3888 hours at 20mA. According to the results mentioned above, the normal working lifetime of tunnel junction regenerated LEDs were concluded. Moreover, the main Failure Mechanisms of it were described. Our work reviews the failure analysis that was performed on the degraded LEDs and the degradation mechanisms that were identified. The results show a thermal degradation mechanism that dominates degradation at high ambient temperatures.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaoming Wang, Weiling Guo, Yongtao Tian, Xia Guo, Guo Gao, and Guangdi Shen "The reliability of tunnel junction regenerated light emitting diodes", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60201X (5 December 2005); https://doi.org/10.1117/12.635049
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