2 December 2005 Long wavelength InP-based micromachined photodetector
Author Affiliations +
Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 602022 (2005) https://doi.org/10.1117/12.635425
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China
A novel InP-based micromechanied tunable photodetector with the structure of OMITMC (One-Mirror-Inclined Three-Mirror-Cavity)is presented. The tuning characteristic of the device is analysed in the way of electrical actuation. Through simulation of the filter transmission spectra and the quantum efficiency, the characteristics of high tunability, narrow bandwidth and high quantum efficiency are analysed. As a result, the photodetector is tuned with 30nm,with a quantum efficiency of 59% and a linewidth of 1.2nm, when actuated by 10 volts.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wen-juan Wang, Wen-juan Wang, Cheng Huang, Cheng Huang, Hui Huang, Hui Huang, Yong-qing Huang, Yong-qing Huang, Bin Chen, Bin Chen, Zhen Zhou, Zhen Zhou, Xiao-min Ren, Xiao-min Ren, } "Long wavelength InP-based micromachined photodetector", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 602022 (2 December 2005); doi: 10.1117/12.635425; https://doi.org/10.1117/12.635425

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