2 December 2005 10Gbps operation of a metamorphic InGaP buffered In0.53Ga0.47As p-i-n photodetector grown on GaAs substrate
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Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 602023 (2005) https://doi.org/10.1117/12.636697
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China
Abstract
A novel top-illuminated In0.53Ga0.47As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using a linearly graded metamorphic InxGa1-xP (x graded from 0.49 to 1) buffer layer has been demonstrated on the SONET OC-192 receiving performance. With a cost-efficient TO-46 package, the MM-PINPD at data rate of 10 Gbit/s can be obtained at minimum optical power of -19.5 dBm. At wavelength of 1550nm, the dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 μm are 13 pA, 0.6 A/W, 3.4×10-15 W/Hz1/2, and 8 GHz, respectively. All the parameters are comparable to those of similar devices made on InP substrate or other InGaAs products epitaxially grown on an InGaAlAs buffered GaAs substrate. The performances of the MM-PINPD on GaAs are analyzed by impulse injecting of 1.2-ps pulse-train, eye pattern at 10Gbps, and frequency response from VNA.
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Yu-Sheng Liao, Yu-Sheng Liao, Gong-Ru Lin, Gong-Ru Lin, Chi-Kuan Lin, Chi-Kuan Lin, Yi-Shiang Chu, Yi-Shiang Chu, Hao-Chung Kuo, Hao-Chung Kuo, Milton Feng, Milton Feng, "10Gbps operation of a metamorphic InGaP buffered In0.53Ga0.47As p-i-n photodetector grown on GaAs substrate", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 602023 (2 December 2005); doi: 10.1117/12.636697; https://doi.org/10.1117/12.636697
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