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2 December 2005 Output characteristics of nonlinear photoconductive semiconductor switches triggered by laser diode
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Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 602026 (2005) https://doi.org/10.1117/12.637097
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China
Abstract
The effect of bias voltage on the characteristic of GaAs photoconductive semiconductor switches (PCSS) was investigated theoretically and experimentally. The outputs of the switches for different bias voltages were obtained by solving the basic equations of transient model of PCSS. With a bias voltage of 2400V and triggered by a laser diode, the high gain PCSS switched a electric pulse with voltage up to 1700V. The simulated results agree with the experiment observations well. A new phenomenon of carriers accumulation effect was found.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yanling Sun, Shunxiang Shi, Xin Wu, and Yanwu Zhu "Output characteristics of nonlinear photoconductive semiconductor switches triggered by laser diode", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 602026 (2 December 2005); https://doi.org/10.1117/12.637097
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