5 December 2005 Quasi-symmetric coupled quantum well and its electro-optical properties
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Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 60202B (2005) https://doi.org/10.1117/12.636131
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China
Abstract
From the theoretical analysis for symmetric coupled quantum well, a novel coupled quantum well structure with low driving electric-field, low absorption loss and large field-induced refractive index change at 1.55 μm is put forward.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhixin Xu, Zhixin Xu, Xiaoqing Jiang, Xiaoqing Jiang, Jianyi Yang, Jianyi Yang, Minghua Wang, Minghua Wang, } "Quasi-symmetric coupled quantum well and its electro-optical properties", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60202B (5 December 2005); doi: 10.1117/12.636131; https://doi.org/10.1117/12.636131
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