Leakage current analysis in AlGaInP/GaInP multi-quantum well lasers by the electrical derivative method

Yun Xu; Yuzhang Li; Guofeng Song; Qiaoqiang Gan; Qing Cao; Liang Guo; Lianghui Chen

doi:10.1117/12.636130

2 December 2005 Leakage current analysis in AlGaInP/GaInP multi-quantum well lasers by the electrical derivative method

Yun Xu, Yuzhang Li, Guofeng Song, Qiaoqiang Gan, Qing Cao, Liang Guo, Lianghui Chen

Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 60202F (2005) https://doi.org/10.1117/12.636130
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China

Abstract

In AlGaInP/GaInP multi-quantum well (MQW) lasers, the electron leakage current is a much more serious problem than that in laser diodes with longer wavelength. To further improve the output performance, the leakage current should be analyzed. In this letter, the temperature dependence of electrical derivative characteristics in AlGaInP/GaInP multi-quantum well lasers was measured, and the potential barrier for electron leakage was obtained. With the help of secondary ion mass spectroscopy (SIMS) measurement, theoretical analysis of the potential barrier was presented and compared with the measurement result. The influence of p-cladding doping level and doping profile on the potential barrier was discussed, and this can be helpful in metalorganic chemical vapor deposition (MOCVD) growth.

Citation Download Citation

Yun Xu, Yuzhang Li, Guofeng Song, Qiaoqiang Gan, Qing Cao, Liang Guo, and Lianghui Chen "Leakage current analysis in AlGaInP/GaInP multi-quantum well lasers by the electrical derivative method", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60202F (2 December 2005); https://doi.org/10.1117/12.636130

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