Paper
2 December 2005 Operating characteristics of 980-nm high-power semiconductor laser stacked arrays packaged by microchannel coolers
Author Affiliations +
Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 60202I (2005) https://doi.org/10.1117/12.636028
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China
Abstract
980nm InGaAs/GaAs separate confinement heterostructure (SCH) strained quantum well (QW) laser with non-absorbing facets is fabricated. The microchannel coolers is designed and fabricated with a five-layer thin oxygen-free copper plate structure. We report the operating characteristics of 980 nm high power semiconductor laser stacked arrays packaged by microchannel coolers. A highest CW output power of 200 W for 5-bar arrays is obtained.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xin Gao, Baoxue Bo, Yi Qu, Jing Zhang, and Hui Li "Operating characteristics of 980-nm high-power semiconductor laser stacked arrays packaged by microchannel coolers", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60202I (2 December 2005); https://doi.org/10.1117/12.636028
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Aluminum

Semiconductor lasers

High power lasers

Quantum wells

Waveguides

Gallium arsenide

Copper

RELATED CONTENT

1180 nm GaInNAs quantum well based high power DBR laser...
Proceedings of SPIE (February 24 2017)
GaSb based lasers for spectra region 2 4 µm ...
Proceedings of SPIE (March 25 2005)
980-nm high-power semiconductor lasers
Proceedings of SPIE (October 19 2001)
High wall plug efficiency diode lasers with an Al free...
Proceedings of SPIE (February 23 2009)

Back to Top