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2 December 2005 Operating characteristics of 980-nm high-power semiconductor laser stacked arrays packaged by microchannel coolers
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Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 60202I (2005) https://doi.org/10.1117/12.636028
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China
Abstract
980nm InGaAs/GaAs separate confinement heterostructure (SCH) strained quantum well (QW) laser with non-absorbing facets is fabricated. The microchannel coolers is designed and fabricated with a five-layer thin oxygen-free copper plate structure. We report the operating characteristics of 980 nm high power semiconductor laser stacked arrays packaged by microchannel coolers. A highest CW output power of 200 W for 5-bar arrays is obtained.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xin Gao, Baoxue Bo, Yi Qu, Jing Zhang, and Hui Li "Operating characteristics of 980-nm high-power semiconductor laser stacked arrays packaged by microchannel coolers", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60202I (2 December 2005); https://doi.org/10.1117/12.636028
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